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This article is cited in 1 scientific paper (total in 1 paper)
Photoelectron capture by surface defects in photoemission from $\mathrm{GaAs}$ into vacuum
V. I. Belinicher, A. G. Paulish, I. V. Ryzhenkova, A. S. Terekhov, S. V. Shevelev Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk
Received: 09.11.1989
Citation:
V. I. Belinicher, A. G. Paulish, I. V. Ryzhenkova, A. S. Terekhov, S. V. Shevelev, “Photoelectron capture by surface defects in photoemission from $\mathrm{GaAs}$ into vacuum”, Fizika Tverdogo Tela, 32:4 (1990), 1194–1200
Linking options:
https://www.mathnet.ru/eng/ftt6058 https://www.mathnet.ru/eng/ftt/v32/i4/p1194
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Abstract page: | 52 | Full-text PDF : | 15 |
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