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Electronic structure of grain boundaries in silicon
A. V. Artem'ev, A. A. Bogatur'yants, Yu. Kh. Vekilov, A. V. Nikolaeva, L. K. Fionova Institute Problems of Technology Microelectronics and High-Purity Materials, Academy of the
Sciences of the USSR
Received: 22.11.1988 Revised: 21.03.1989
Citation:
A. V. Artem'ev, A. A. Bogatur'yants, Yu. Kh. Vekilov, A. V. Nikolaeva, L. K. Fionova, “Electronic structure of grain boundaries in silicon”, Fizika Tverdogo Tela, 31:9 (1989), 101–108
Linking options:
https://www.mathnet.ru/eng/ftt5614 https://www.mathnet.ru/eng/ftt/v31/i9/p101
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Abstract page: | 48 | Full-text PDF : | 27 |
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