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Effect of band filling by nonequilibrium carriers on self-diffraction in $\mathrm{Si}$
V. D. Asimova, R. G. Zaporozhchenko, V. A. Zaporozhchenko, I. V. Pilipovich Institute of Physics of the Academy of Sciences of the Byelorussia SSR, Minsk
Received: 10.08.1987 Revised: 15.08.1988
Citation:
V. D. Asimova, R. G. Zaporozhchenko, V. A. Zaporozhchenko, I. V. Pilipovich, “Effect of band filling by nonequilibrium carriers on self-diffraction in $\mathrm{Si}$”, Fizika Tverdogo Tela, 31:1 (1989), 214–219
Linking options:
https://www.mathnet.ru/eng/ftt5091 https://www.mathnet.ru/eng/ftt/v31/i1/p214
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Abstract page: | 38 | Full-text PDF : | 30 |
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