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Properties of a two-dimensional hole gas at the silicon surface on sapphire in quantizing magnetic fields
G. M. Gusev, Z. D. Kvon, E. B. Olshanetskii, P. A. Cheremnykh Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk
Received: 16.02.1987 Revised: 08.07.1987
Citation:
G. M. Gusev, Z. D. Kvon, E. B. Olshanetskii, P. A. Cheremnykh, “Properties of a two-dimensional hole gas at the silicon surface on sapphire in quantizing magnetic fields”, Fizika Tverdogo Tela, 30:2 (1988), 368–373
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https://www.mathnet.ru/eng/ftt4344 https://www.mathnet.ru/eng/ftt/v30/i2/p368
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Abstract page: | 29 | Full-text PDF : | 17 |
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