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Fizika Tverdogo Tela, 1986, Volume 28, Issue 1, Pages 230–234 (Mi ftt34)  
Light absorption by deep dislocation states in silicon

A. V. Bazhenov, V. V. Kveder, L. L. Krasilnikova, A. I. Shalynin

Институт физики твердого тела А Н СССР Черноголовка, Московская область
Full-text PDF (689 kB)
Received: 14.02.1985
Revised: 17.07.1985
Bibliographic databases:
Document Type: Article
UDC: 546.28:535.3
Language: Russian
Citation: A. V. Bazhenov, V. V. Kveder, L. L. Krasilnikova, A. I. Shalynin, “Light absorption by deep dislocation states in silicon”, Fizika Tverdogo Tela, 28:1 (1986), 230–234
Citation in format AMSBIB
\Bibitem{BazKveKra86}
\by A.~V.~Bazhenov, V.~V.~Kveder, L.~L.~Krasilnikova, A.~I.~Shalynin
\paper Light absorption by deep dislocation states in silicon
\jour Fizika Tverdogo Tela
\yr 1986
\vol 28
\issue 1
\pages 230--234
\mathnet{http://mi.mathnet.ru/ftt34}
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