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Fizika Tverdogo Tela, 1984, Volume 26, Issue 5, Pages 1412–1418 (Mi ftt2881)  
Electron-paramagnetic-res and dlts comparative study of process of dislocation silicon dangling bond annealing

M. N. Zolotukhin, V. V. Kveder, Yu. A. Osip'yan, I. R. Sagdeev

Institute of Solid State Physics of the Academy of Sciences SSSR
Full-text PDF (1023 kB)
Received: 28.12.1983
Bibliographic databases:
Document Type: Article
UDC: 537.311.322
Language: Russian
Citation: M. N. Zolotukhin, V. V. Kveder, Yu. A. Osip'yan, I. R. Sagdeev, “Electron-paramagnetic-res and dlts comparative study of process of dislocation silicon dangling bond annealing”, Fizika Tverdogo Tela, 26:5 (1984), 1412–1418
Citation in format AMSBIB
\Bibitem{ZolKveOsi84}
\by M.~N.~Zolotukhin, V.~V.~Kveder, Yu.~A.~Osip'yan, I.~R.~Sagdeev
\paper Electron-paramagnetic-res and dlts comparative study of process of dislocation silicon dangling bond annealing
\jour Fizika Tverdogo Tela
\yr 1984
\vol 26
\issue 5
\pages 1412--1418
\mathnet{http://mi.mathnet.ru/ftt2881}
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