Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika Tverdogo Tela, 1987, Volume 29, Issue 10, Pages 3072–3076 (Mi ftt1499)  
Electrically inactive fraction of the shallow impurity in silicon

M. I. Vasilevskii, V. A. Panteleev

Gor'kii State University named after N. I. Lobachevskogo
Full-text PDF (536 kB)
Received: 08.06.1987
Bibliographic databases:
Document Type: Article
UDC: 539.219.3
Language: Russian
Citation: M. I. Vasilevskii, V. A. Panteleev, “Electrically inactive fraction of the shallow impurity in silicon”, Fizika Tverdogo Tela, 29:10 (1987), 3072–3076
Citation in format AMSBIB
\Bibitem{VasPan87}
\by M.~I.~Vasilevskii, V.~A.~Panteleev
\paper Electrically inactive fraction of the shallow impurity in silicon
\jour Fizika Tverdogo Tela
\yr 1987
\vol 29
\issue 10
\pages 3072--3076
\mathnet{http://mi.mathnet.ru/ftt1499}
Linking options:
  • https://www.mathnet.ru/eng/ftt1499
  • https://www.mathnet.ru/eng/ftt/v29/i10/p3072
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:43
    Full-text PDF :17
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024