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XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10-13, 2020
Superconductivity
Spin-dependent electron transport in MeRAM
N. Kh. Useinova, A. P. Chuklanovb, D. A. Bizyaevb, N. I. Nurgazizovb, A. A. Bukharaevb a Institute of Physics, Kazan Federal University,
Kazan, Russia
b Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center, Russian Academy of Sciences, Kazan, Russia
Abstract:
The paper presents theoretical model of a straintronics magnetoelectric random-access memory (MeRAM) storage cell with configurational anisotropy. The MeRAM cell consists of ferromagnetic layers with different orientations of the quasi-uniform magnetization, which is divided into identical magnetic tunnel junction’s ferromagnet|insulator|ferromagnet, in the form of a sandwich of planar layers. The modified theory for magnetic tunnel junction is used to calculate the spin-dependent current and tunnel magnetoresistance like functions of orientations magnetizations of layers.
Keywords:
straintronics, magnetic heterostructure, magnetic tunnel junction, spin-dependent current, tunnel magnetoresistance.
Received: 26.03.2020 Revised: 26.03.2020 Accepted: 02.04.2020
Citation:
N. Kh. Useinov, A. P. Chuklanov, D. A. Bizyaev, N. I. Nurgazizov, A. A. Bukharaev, “Spin-dependent electron transport in MeRAM”, Fizika Tverdogo Tela, 62:9 (2020), 1542; Phys. Solid State, 62:9 (2020), 1706–1712
Linking options:
https://www.mathnet.ru/eng/ftt10181 https://www.mathnet.ru/eng/ftt/v62/i9/p1542
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Abstract page: | 60 | Full-text PDF : | 18 |
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