Loading [MathJax]/jax/output/SVG/config.js
Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika Tverdogo Tela, 2020, Volume 62, Issue 10, Page 1646 (Mi ftt10177)  
Dielectrics

Reliability characteristics of diamond-like carbon as gate insulator for metal–insulator–semiconductor application

S.-L. Tyanab, H.-C. Tangb, Z.-W. Wua, T.-S. Moc

a Department of Physics, National Cheng Kung University, Tainan, 701, Taiwan
b Department of Photonics, National Cheng Kung University
c Department of Electronic Engineering, Kun Shan University of Technology, Tainan, 710, Taiwan
Full-text PDF (27 kB)
Abstract: This study presents the reliability of diamond-like carbon (DLC) ultrathin films fabricated by DC magnetron sputtering as the gate dielectric layer in metal–insulator–semiconductor (MIS) devices. Stress-induced leakage current (SILC) and time-dependent dielectric breakdown (TDDB) measurements were performed to determine the reliability of the devices. The MIS device with DLC film deposited at 1100-V bias exhibited little variation of SILC under different constant voltage stress times and had a long TDDB lifetime. The results indicate excellent reliability of DLC films used as gate dielectrics. Moreover, several soft breakdown events occurred during TDDB measuring. An extended percolation model was adopted for explanation of the current versus time characteristics.
Keywords: diamond-like carbon, metal–insulator–semiconductor, gate dielectric, stress-induced leakage current, time-dependent dielectric breakdown, reliability, extended percolation model.
Funding agency Grant number
Ministry of Education Republic of China (Taiwan) D108-F2204
This research partially received funding from the Headquarters of University Advancement at National Cheng Kung University (no. D108-F2204), which is financially supported by the Ministry of Education, Taiwan, ROC.
Received: 02.05.2020
Revised: 02.05.2020
Accepted: 05.05.2020
English version:
Physics of the Solid State, 2020, Volume 62, Issue 10, Pages 1845–1849
DOI: https://doi.org/10.1134/S1063783420100339
Document Type: Article
Language: English
Citation: S.-L. Tyan, H.-C. Tang, Z.-W. Wu, T.-S. Mo, “Reliability characteristics of diamond-like carbon as gate insulator for metal–insulator–semiconductor application”, Fizika Tverdogo Tela, 62:10 (2020), 1646; Phys. Solid State, 62:10 (2020), 1845–1849
Citation in format AMSBIB
\Bibitem{TyaTanWu20}
\by S.-L.~Tyan, H.-C.~Tang, Z.-W.~Wu, T.-S.~Mo
\paper Reliability characteristics of diamond-like carbon as gate insulator for metal–insulator–semiconductor application
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 10
\pages 1646
\mathnet{http://mi.mathnet.ru/ftt10177}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 10
\pages 1845--1849
\crossref{https://doi.org/10.1134/S1063783420100339}
Linking options:
  • https://www.mathnet.ru/eng/ftt10177
  • https://www.mathnet.ru/eng/ftt/v62/i10/p1646
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:58
    Full-text PDF :22
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025