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Fizika Tverdogo Tela, 2020, Volume 62, Issue 11, Page 1834 (Mi ftt10169)  
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Band-gap sensitived Seebeck effect in heavy group-IV monolayers

Y. Xuab, X. Lia, L. Qianc

a College of Physics Science and Technology, Yangzhou University Yangzhou, 225002, China
b National Laboratory of Solid State Microstructures, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
c School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, 221116, China
Full-text PDF (27 kB) Citations (2)
Abstract: We have systematically investigated the spin- and valley-dependent Seebeck effect in irradiated heavy group-IV monolayers including silicene, germanene, and stanene by means of semi-classical Boltzmann equation in diffusive regime. Due to the interplay of strong intrinsic spin-orbit coupling, perpendicular electric field, and off-resonant light field, the temperature-driven spin and valley conductivity can be controllable effectively. Except for numerical results, the amplitude of Seebeck coefficient is analyzed and found to be in direct proportion to the band gap at high temperature. It supplies a flexible method to modulate the Seebeck effect. In addition, we have compared the thermoelectric transport properties of different group-IV materials and found that the figure of merit shows great enhancement from silicene to stanene. These findings are excepted to provide a platform for the heavy group-IV materials in future spin–valley thermal and energy-saving devices.
Keywords: Seebeck effect, heavy group-IV materials, off-resonant light, spin and valley caloritronics.
Funding agency Grant number
National Natural Science Foundation of China 11747019
11804291
Natural Science Foundation of Jiangsu Province BK20180890
17KJB140031
National Laboratory of Solid State Microstructures of Nanjing University M30029
This work was supported by the National Natural Science Foundation of China (Grant nos. 11747019 and 11804291), the Natural Science Foundation of Jiangsu Province (Grant no. BK20180890), the Universities Natural Science Research Project of Jiangsu Province (Grant no. 17KJB140031), the open project of National Laboratory of Solid State Microstructures of Nanjing University (Grant no. M30029).
Received: 05.05.2020
Revised: 30.06.2020
Accepted: 01.07.2020
English version:
Physics of the Solid State, 2020, Volume 62, Issue 11, Pages 2052–2057
DOI: https://doi.org/10.1134/S1063783420110402
Document Type: Article
Language: English
Citation: Y. Xu, X. Li, L. Qian, “Band-gap sensitived Seebeck effect in heavy group-IV monolayers”, Fizika Tverdogo Tela, 62:11 (2020), 1834; Phys. Solid State, 62:11 (2020), 2052–2057
Citation in format AMSBIB
\Bibitem{XuLiQia20}
\by Y.~Xu, X.~Li, L.~Qian
\paper Band-gap sensitived Seebeck effect in heavy group-IV monolayers
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 11
\pages 1834
\mathnet{http://mi.mathnet.ru/ftt10169}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 11
\pages 2052--2057
\crossref{https://doi.org/10.1134/S1063783420110402}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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