Study of transport phenomenon in amorphous Re$_x$Si$_{1-x}$ thin films on the both sides of the metal–insulator transition at very low temperatures

In this work, we study the electrical conductivity behaviors on the both sides of the metal–insulator transition (MIT) in Re$_x$Si$_{1-x}$ amorphous thin films at very low temperature. In fact, our investigation re-analyzed the experimental measurements of Re$_x$Si$_{1-x}$ obtained by K.G. Lisunov et al. On the insulating side of the MIT, the electrical conductivity can be interpreted by the existence of the variable range-hopping (VRH) regime. However, on the metallic side of the MIT, the electrical conductivity is mainly due to electron–electron interactions and low localization effects.