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This article is cited in 18 scientific papers (total in 18 papers)
Semiconductors
Partial conductivities in perovskites CaZr$_{1-x}$Sc$_{x}$O$_{3-\alpha}$ ($x$ = 0.03–0.20) in an oxidation atmosphere
V. P. Gorelova, V. B. Balakirevaa, A. V. Kuz'minab a Institute of High-Temperature Electrochemistry, RAS, Yekaterinburg, Russia
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
Abstract:
Partial (ionic, proton, and hole) conductivities of oxides CaZr$_{1-x}$Sc$_{x}$O$_{3-\alpha}$ ($x$ = 0.03–0.20) with the perovskite structure in air atmosphere have been studied as functions of temperature in the range of 600–900$^\circ$C and partial water-vapor pressure in the range of $p_{\mathrm{H}_2\mathrm{O}}$ = 40–2500 Pa. The influence of the humidity of the atmosphere on the relative change in the concentration of oxygen vacancies as a function of temperature has been estimated.
Keywords:
Perovskite, Oxygen Vacancy, Transport Number, Hole Conductivity, Partial Conductivity.
Received: 02.06.2015
Citation:
V. P. Gorelov, V. B. Balakireva, A. V. Kuz'min, “Partial conductivities in perovskites CaZr$_{1-x}$Sc$_{x}$O$_{3-\alpha}$ ($x$ = 0.03–0.20) in an oxidation atmosphere”, Fizika Tverdogo Tela, 58:1 (2016), 14–20; Phys. Solid State, 58:1 (2016), 12–18
Linking options:
https://www.mathnet.ru/eng/ftt10100 https://www.mathnet.ru/eng/ftt/v58/i1/p14
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