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Fizika Tverdogo Tela, 2016, Volume 58, Issue 2, Pages 367–371 (Mi ftt10091)  

This article is cited in 26 scientific papers (total in 26 papers)

Polymers

Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films

A. S. Komolova, E. F. Laznevaa, N. B. Gerasimovaa, Yu. A. Paninaa, A. V. Baramygina, G. D. Zashikhina, S. A. Pshenichnyukab

a Saint Petersburg State University
b Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences
Abstract: This paper presents the results of the investigation of the interface potential barrier and vacant electronic states in the energy range of 5 to 20 eV above the Fermi level (E F) in the deposition of perylene tetracarboxylic dianhydride (PTCDA) films on the oxidized germanium surface ((GeO2)Ge). The concentration of oxide on the (GeO2)Ge surface was determined by X-ray photoelectron spectroscopy. In the experiments, we used the recording of the reflection of a test low-energy electron beam from the surface, implemented in the mode of total current spectroscopy. The theoretical analysis involves the calculation of the energy and spatial distribution of the orbitals of PTCDA molecules by the density functional theory (DFT) using B3LYP functional with the basis 6–31G(d), followed by the scaling of the calculated values of the orbital energy according to the procedure well-proven in the studies of small organic conjugated molecules. The pattern of changes in the fine structure of the total current spectra with increasing thickness of the PTCDA coating on the (GeO2)Ge surface to 6 nm was studied. At energies below 9 eV above EF, there is a maximum of the density of unoccupied electron states in the PTCDA film, formed mainly by π molecular orbitals. The higher density maxima of unoccupied states are of σ nature. The formation of the interface potential barrier in the deposition of PTCDA at the (GeO2)Ge surface is accompanied by an increase in the work function of the surface, EvacEF, from 4.6 ± 0.1 to 4.9 ± 0.1 eV. This occurs when the PTCDA coating thickness increases to 3 nm, and upon further deposition of PTCDA, the work function of the surface does not change, which corresponds to the model of formation of a limited polarization layer in the deposited organic film.
Keywords: Work Function, Orbital Energy, Dissociative Electron Capture, Organic Coating, Organic Film.
Received: 08.07.2015
English version:
Physics of the Solid State, 2016, Volume 58, Issue 2, Pages 377–381
DOI: https://doi.org/10.1134/S106378341602013X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, A. V. Baramygin, G. D. Zashikhin, S. A. Pshenichnyuk, “Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films”, Fizika Tverdogo Tela, 58:2 (2016), 367–371; Phys. Solid State, 58:2 (2016), 377–381
Citation in format AMSBIB
\Bibitem{KomLazGer16}
\by A.~S.~Komolov, E.~F.~Lazneva, N.~B.~Gerasimova, Yu.~A.~Panina, A.~V.~Baramygin, G.~D.~Zashikhin, S.~A.~Pshenichnyuk
\paper Structure of vacant electronic states of an oxidized germanium surface upon deposition of perylene tetracarboxylic dianhydride films
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 2
\pages 367--371
\mathnet{http://mi.mathnet.ru/ftt10091}
\elib{https://elibrary.ru/item.asp?id=25668849}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 2
\pages 377--381
\crossref{https://doi.org/10.1134/S106378341602013X}
Linking options:
  • https://www.mathnet.ru/eng/ftt10091
  • https://www.mathnet.ru/eng/ftt/v58/i2/p367
  • This publication is cited in the following 26 articles:
    1. A. S. Komolov, E. F. Lazneva, V. S. Sobolev, S. A. Pshenichnyuk, N. L. Asfandiarov, E. V. Zhizhin, D. A. Pudikov, E. A. Dubov, I. A. Pronin, F. Dj. Akbarova, U. B. Sharopov, “Density of Unoccupied Electronic States of the Ultrathin Layers of Dibromo-Bianthracene on the Surface of Layer-by-Layer Grown ZnO”, Crystallogr. Rep., 69:1 (2024), 109  crossref
    2. Utkirjon Sharopov, Kamoliddin Samiev, Akbarjon To'raev, Muzaffar Kurbanov, Mukhtorjon Karimov, Dilmurod Saidov, Feruza Akbarova, Sitora Turopova, Zafar Iskandarov, Sokhib Islamov, Aleksei Komolov, Igor Pronin, Hanna Bandarenka, Odiljon Abdurakhmonov, Sherzod Abdurakhmonov, Marutheeswaran Srinivasan, Kulwinder Kaur, “Exploring electron energy dependencies in the formation of surface charge on ZnO crystals”, Vacuum, 227 (2024), 113395  crossref
    3. U. Sharopov, K. Samiev, M. Kurbanov, M. Karimov, D. Saidov, F. Akbarova, Z. Iskandarov, S. Islamov, A. Komolov, S. Pshenichnyuk, “Tuning Surface Charge and Defects in Zinc Oxide Crystals Via Low-Energy Electron Irradiation”, J. Surf. Investig., 18:S1 (2024), S311  crossref
    4. Alisher Kakhramonov, Mukhtorjon K. Karimov, Muzaffar.K. Kurbanov, Dilmurod Sh. Saidov, Nargiza M. Nazarova, Akbar S. Halimov, 2023 IEEE XVI International Scientific and Technical Conference Actual Problems of Electronic Instrument Engineering (APEIE), 2023, 1670  crossref
    5. A. A. Karmanov, I. A. Pronin, N. D. Yakushova, A. S. Komolov, V. A. Moshnikov, “An X-ray Photoelectron Spectroscopy Study of Ultraviolet Photoannealing-Induced Surface Transformations of Sol–Gel Derived Zinc Oxide-Based Films”, Inorg Mater, 58:11 (2022), 1145  crossref
    6. U.B. Sharopov, K. Kaur, M.K. Kurbanov, D.Sh. Saidov, Sh.R. Nurmatov, M.M. Sharipov, B.E. Egamberdiev, “Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition”, Thin Solid Films, 735 (2021), 138902  crossref
    7. I. A. Pronin, N. D. Yakushova, I. A. Averin, A. A. Karmanov, A. S. Komolov, M. M. Sychev, V. A. Moshnikov, E. I. Terukov, “Chemical Binding of Carbon Dioxide on Zinc Oxide Powders Prepared by Mechanical Milling”, Inorg Mater, 57:11 (2021), 1140  crossref
    8. Roberto Costantini, Albano Cossaro, Alberto Morgante, Martina Dell'Angela, “Light-Induced Charge Accumulation in PTCDI/Pentacene/Ag(111) Heterojunctions”, Chemistry, 3:3 (2021), 744  crossref
    9. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, S. A. Pshenichnyuk, N. L. Asfandiarov, V. A. Kraikin, B. Handke, “Unoccupied electronic states and potential barrier in films of substituted diphenylphthalides on the surface of highly ordered pyrolytic graphite”, Phys. Solid State, 63:2 (2021), 362–367  mathnet  mathnet  crossref  crossref
    10. A. S. Komolov, E. F. Lazneva, E. V. Zhizhin, E. K. Alidzhanov, Yu. D. Lantukh, S. N. Letuta, D. A. Razdobreev, “Photophysical properties of thin films of perylene modified with tetracarboxylic acid dianhydride and diimide functional groups”, Phys. Solid State, 63:9 (2021), 1419–1425  mathnet  mathnet  crossref  crossref
    11. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, E. V. Zhizhin, S. A. Pshenichnyuk, N. L. Asfandiarov, B. Handke, “Unoccupied electron states of ultrathin quaterphenyl films on the surfaces of layered CdS and oxidized silicon”, Phys. Solid State, 63:8 (2021), 1205–1210  mathnet  mathnet  crossref  crossref
    12. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, A. V. Baramygin, V. S. Sobolev, S. A. Pshenichnyuk, N. L. Asfandiarov, V. A. Kraikin, B. Handke, “Density of vacant electronic states of semiconductor films of molecules of naphthalene and diphenylphthalide modified by electroactive functional groups”, Phys. Solid State, 62:7 (2020), 1256–1261  mathnet  mathnet  crossref  crossref
    13. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, Yu. A. Panina, S. A. Pshenichnyuk, N. L. Asfandiarov, B. Handke, “Propagation of low-energy electrons and the density of unoccupied states in ultrathin TCNQ layers on the oxidized silicon surface”, Phys. Solid State, 62:7 (2020), 1245–1250  mathnet  mathnet  crossref  crossref
    14. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states of ultrathin films of thiophene–phenylene cooligomers on the surface of polycrystalline gold”, Phys. Solid State, 62:10 (2020), 1960–1966  mathnet  mathnet  crossref  crossref
    15. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, S. A. Pshenichnyuk, N. L. Asfandiarov, V. A. Kraikin, B. Handke, “The unoccupied electronic states of the ultrathin diphenylphthalide films on the surface of the highly oriented pyrolytic graphite”, Phys. Solid State, 61:10 (2019), 1922–1926  mathnet  mathnet  crossref  crossref
    16. A.S. Komolov, E.F. Lazneva, N.B. Gerasimova, Yu. A. Panina, V.S. Sobolev, A.V. Koroleva, S.A. Pshenichnyuk, N.L. Asfandiarov, A. Modelli, B. Handke, O.V. Borshchev, S.A. Ponomarenko, “Conduction band electronic states of ultrathin layers of thiophene/phenylene co-oligomers on an oxidized silicon surface”, Journal of Electron Spectroscopy and Related Phenomena, 235 (2019), 40  crossref
    17. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, V. S. Sobolev, Yu. A. Panina, S. A. Pshenichnyuk, N. L. Asfandiarov, “Atomic composition and morphology of thin films of resveratrol deposited on oxidized silicon and polycrystalline gold surfaces”, Phys. Solid State, 61:3 (2019), 468–473  mathnet  mathnet  crossref  crossref
    18. I.A. Pronin, N. D. Yakusheva, M.M. Sychev, A.S. Komolov, S.V. Myakin, A. A. Karmanov, I.A. Averin, V.A. Moshnikov, “Evolyutsiya kislotno-osnovnykh svoistv poverkhnosti poroshkov oksida tsinka, poluchennykh metodom razmola v attritore”, Fizika i khimiya stekla', 2018, no. 5, 560  crossref
    19. A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, S. A. Pshenichnyuk, O. V. Borshchev, S. A. Ponomarenko, B. Handke, “Unoccupied electron states and the formation of interface between films of dimethyl-substituted thiophene–phenylene coolygomers and oxidized silicon surface”, Phys. Solid State, 60:5 (2018), 1029–1034  mathnet  mathnet  crossref  crossref
    20. I. A. Pronin, N. D. Yakushova, M. M. Sychev, A. S. Komolov, S. V. Myakin, A. A. Karmanov, I. A. Averin, V. A. Moshnikov, “Evolution of Acid–Base Properties of the Surface of Zinc Oxide Powders Obtained by the Method of Grinding in an Attritor”, Glass Phys Chem, 44:5 (2018), 464  crossref
    Citing articles in Google Scholar: Russian citations, English citations
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