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Fizika Tverdogo Tela, 2016, Volume 58, Issue 2, Pages 350–353 (Mi ftt10088)  
Surface physics, thin films

Surface morphological instability of silicon (100) crystals under microwave ion physical etching

R. K. Yafarov, V. Ya. Shanygin

Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Full-text PDF (97 kB)
Abstract: This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.
Keywords: Contact Angle, Silicon Wafer, Surface Free Energy, Clean Surface, Excess Free Energy.
Received: 02.06.2015
English version:
Physics of the Solid State, 2016, Volume 58, Issue 2, Pages 360–363
DOI: https://doi.org/10.1134/S1063783416020347
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. K. Yafarov, V. Ya. Shanygin, “Surface morphological instability of silicon (100) crystals under microwave ion physical etching”, Fizika Tverdogo Tela, 58:2 (2016), 350–353; Phys. Solid State, 58:2 (2016), 360–363
Citation in format AMSBIB
\Bibitem{YafSha16}
\by R.~K.~Yafarov, V.~Ya.~Shanygin
\paper Surface morphological instability of silicon (100) crystals under microwave ion physical etching
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 2
\pages 350--353
\mathnet{http://mi.mathnet.ru/ftt10088}
\elib{https://elibrary.ru/item.asp?id=25668843}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 2
\pages 360--363
\crossref{https://doi.org/10.1134/S1063783416020347}
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