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Surface physics, thin films
Surface morphological instability of silicon (100) crystals under microwave ion physical etching
R. K. Yafarov, V. Ya. Shanygin Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Abstract:
This paper presents the results of studies of the dynamics of relaxation modification of the morphological characteristics of atomically clean surfaces of silicon (100) crystals with different types of conductivity after microwave ion physical etching in an argon atmosphere. For the first time, the effect of the electronic properties on the morphological characteristics and the surface free energy of silicon crystals is experimentally shown and proven by physicochemical methods.
Keywords:
Contact Angle, Silicon Wafer, Surface Free Energy, Clean Surface, Excess Free Energy.
Received: 02.06.2015
Citation:
R. K. Yafarov, V. Ya. Shanygin, “Surface morphological instability of silicon (100) crystals under microwave ion physical etching”, Fizika Tverdogo Tela, 58:2 (2016), 350–353; Phys. Solid State, 58:2 (2016), 360–363
Linking options:
https://www.mathnet.ru/eng/ftt10088 https://www.mathnet.ru/eng/ftt/v58/i2/p350
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Abstract page: | 34 | Full-text PDF : | 16 |
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