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This article is cited in 1 scientific paper (total in 1 paper)
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Distribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes under plastic deformation in subsurface layers of Si: B crystals
O. V. Koplakab, M. A. Vasil’evc, R. B. Morgunova a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b National Taras Shevchenko University of Kyiv
c G. V. Kurdyumov Institute for Metal Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine
Abstract:
The redistribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes in subsurface layers of Si: B single crystals after their plastic deformation has been revealed. It has been found that the distribution profile of $^{28}$Si and $^{29}$Si isotopes becomes smoother after deformation, whereas the $^{30}$Si isotope distribution remains unchanged. A change in the subsurface profile of the $^{29}$SiO oxide is observed, which indicates the migration of the $^{29}$Si isotope in the composition of oxygen complexes during plastic deformation.
Received: 02.07.2015
Citation:
O. V. Koplak, M. A. Vasil’ev, R. B. Morgunov, “Distribution of $^{28}$Si, $^{29}$Si, and $^{30}$Si isotopes under plastic deformation in subsurface layers of Si: B crystals”, Fizika Tverdogo Tela, 58:2 (2016), 242–245; Phys. Solid State, 58:2 (2016), 247–250
Linking options:
https://www.mathnet.ru/eng/ftt10069 https://www.mathnet.ru/eng/ftt/v58/i2/p242
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