S. Yu. Davydov, “Hexagonal two-dimensional layers of $A_{N}B_{8-N}$ compounds on metals”, Fizika Tverdogo Tela, 58:4 (2016), 779–790; Phys. Solid State, 58:4 (2016), 804

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Fizika Tverdogo Tela, 2016, Volume 58, Issue 4, Pages 779–790 (Mi ftt10026)

This article is cited in 26 scientific papers (total in 26 papers)

Low dimensional systems

Hexagonal two-dimensional layers of $A_{N}B_{8-N}$ compounds on metals

S. Yu. Davydov^ab

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Full-text PDF (362 kB) Citations (26)

Abstract: Analytical expressions for densities of states of free graphene-like $A_{N}B_{8-N}$ compounds and flat and buckled epitaxial monolayers on a metallic substrate have been obtained by the tight-binding method using a low-energy approximation. Characteristic features of the densities of states as functions of the layer–substrate coupling constant and the buckling factor have been analyzed. The energy gaps and the binding energy between the epitaxial layer and the substrate have been estimated.

Keywords: Work Function, GaSb, Epitaxial Layer, Metallic Substrate, AlSb.

Received: 05.10.2015

English version:
Physics of the Solid State, 2016, Volume 58, Issue 4, Pages 804–816
DOI: https://doi.org/10.1134/S1063783416040041

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: S. Yu. Davydov, “Hexagonal two-dimensional layers of $A_{N}B_{8-N}$ compounds on metals”, Fizika Tverdogo Tela, 58:4 (2016), 779–790; Phys. Solid State, 58:4 (2016), 804–816

Citation in format AMSBIB

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\paper Hexagonal two-dimensional layers of $A_{N}B_{8-N}$ compounds on metals

\jour Fizika Tverdogo Tela

\yr 2016

\vol 58

\issue 4

\pages 779--790

\mathnet{http://mi.mathnet.ru/ftt10026}

\elib{https://elibrary.ru/item.asp?id=25669035}

\transl

\jour Phys. Solid State

\yr 2016

\vol 58

\issue 4

\pages 804--816

\crossref{https://doi.org/10.1134/S1063783416040041}

Linking options:

https://www.mathnet.ru/eng/ftt10026

https://www.mathnet.ru/eng/ftt/v58/i4/p779

This publication is cited in the following 26 articles:

S. Yu. Davydov, O. V. Posrednik, “Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs”, Semiconductors, 58:2 (2024), 110
S. Yu. Davydov, A. A. Lebedev, “Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model”, Semiconductors, 58:5 (2024), 401
S.Yu. Davydov, O.V. Posrednik, “Interatomic Coulomb repulsion in epitaxial carbon nanostructures on metals: Account of “excitonic” mean values”, Physics Letters A, 474 (2023), 128833
S. Yu. Davydov, O. V. Posrednik, “Electron States of Atoms in Monolayers Adsorbed on Silicon Carbide”, Semiconductors, 57:2 (2023), 100
S. Yu. Davydov, A. A. Lebedev, P. V. Bulat, “Charge Transfer in the Vertical Structures Formed by Two-Dimensional Layers”, Tech. Phys. Lett., 49:S3 (2023), S256
S. Yu. Davydov, “On the contact of a two-dimensional transition metal with a graphene-like compound”, Phys. Solid State, 63:5 (2021), 796–801
S. Yu. Davydov, O. V. Posrednik, “Model of a “Two-dimensional metal–graphene-like compound” junction: consideration for interaction between the components”, Semiconductors, 55:7 (2021), 595–600
S. Yu. Davydov, “Model of graphane-like $h$-$AB$–$C$ compounds”, Phys. Solid State, 63:3 (2021), 505–510
S. Yu. Davydov, “Model estimates of quantum capacitance for the graphene-like nanostructures”, Semiconductors, 55:2 (2021), 234–242
S. Yu. Davydov, “Effective masses and characteristic velocities of charge carriers in low-dimensional A$_{N}$B$_{8-N}$ structures”, Tech. Phys. Lett., 46:1 (2020), 50–54
S. Yu. Davydov, A. A. Lebedev, A. V. Zubov, P. V. Bulat, “Model estimates of the quantum capacitance of graphene-like nanostructures”, Tech. Phys. Lett., 46:12 (2020), 1174–1176
S. Yu. Davydov, A. V. Zubov, “On the dipole–dipole interaction of atoms in the layers adsorbed on three- and two-dimensional semiconductors”, Phys. Solid State, 62:8 (2020), 1469–1472
S. Yu. Davydov, “AlN and GaN nanostructures: analytical estimations of the characteristics of the electronic spectrum”, Phys. Solid State, 62:6 (2020), 1085–1089
S. Yu. Davydov, A. V. Zubov, “2D SiC/Si structure: electron states and adsorbability”, Semiconductors, 54:7 (2020), 774–781
S. Yu. Davydov, “Model approach to the description of graphane properties: analytical results”, Phys. Solid State, 62:12 (2020), 2459–2466
S. Yu. Davydov, “Low-dimensional silicon-carbide structures: analytical estimates of electron-spectrum characteristics”, Semiconductors, 54:5 (2020), 523–528
S. Yu. Davydov, “Magnetization of epitaxial graphene induced by magnetic metallic substrate”, Phys. Solid State, 62:2 (2020), 378–383
G. O. Abdullaev, Z. Z. Alisultanov, “To the theory of electronic states of an epitaxial graphene bilayer”, Phys. Solid State, 61:3 (2019), 488–492
S. Yu. Davydov, “On decoration of a zigzag edge of epitaxial graphene”, Phys. Solid State, 61:1 (2019), 48–55
S. Yu. Davydov, “Carbon nanostructures on a semiconductor substrate”, Phys. Solid State, 61:6 (2019), 1154–1161

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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