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Doklady Akademii Nauk SSSR, 1988, Volume 300, Number 1, Pages 84–88 (Mi dan48273)  
PHYSICS

Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating

A. V. Latyshev, A. L. Aseev, A. B. Krasil'nikov, A. V. Rzhanov, S. I. Stenin

Institute of Semiconductor Physics of USSR Academy of Sciences, Siberian Branch, Novosibirsk
Full-text PDF (882 kB)
Document Type: Article
UDC: 537.533.35+537.31.33+539.211
Language: Russian
Citation: A. V. Latyshev, A. L. Aseev, A. B. Krasil'nikov, A. V. Rzhanov, S. I. Stenin, “Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating”, Dokl. Akad. Nauk SSSR, 300:1 (1988), 84–88
Citation in format AMSBIB
\Bibitem{LatAseKra88}
\by A.~V.~Latyshev, A.~L.~Aseev, A.~B.~Krasil'nikov, A.~V.~Rzhanov, S.~I.~Stenin
\paper Behavior of monoatomic steps on silicon $(\mathrm{III})$ surface during the sublimation under conditions of the electric current heating
\jour Dokl. Akad. Nauk SSSR
\yr 1988
\vol 300
\issue 1
\pages 84--88
\mathnet{http://mi.mathnet.ru/dan48273}
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