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Doklady Akademii Nauk SSSR, 1987, Volume 296, Number 5, Pages 1098–1100 (Mi dan48094)  
PHYSICS

Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation

A. A. Bugaev, B. P. Zakharchenya, Yu. B. Kiselev, V. A. Lukoshkin

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (465 kB)
Received: 07.07.1986
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: A. A. Bugaev, B. P. Zakharchenya, Yu. B. Kiselev, V. A. Lukoshkin, “Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation”, Dokl. Akad. Nauk SSSR, 296:5 (1987), 1098–1100
Citation in format AMSBIB
\Bibitem{BugZakKis87}
\by A.~A.~Bugaev, B.~P.~Zakharchenya, Yu.~B.~Kiselev, V.~A.~Lukoshkin
\paper Surface micro roughness influence on the induced absorption value in $\mathrm{Si}$ and $\mathrm{GaAs}$ at picosecond excitation
\jour Dokl. Akad. Nauk SSSR
\yr 1987
\vol 296
\issue 5
\pages 1098--1100
\mathnet{http://mi.mathnet.ru/dan48094}
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