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Doklady Akademii Nauk SSSR, 1981, Volume 261, Number 2, Pages 346–347 (Mi dan44863)  
PHYSICS

Tunneling in the system $\mathrm{GaAs}$–$\mathrm{V}$ and $\mathrm{GaAs}$–$\mathrm{V}_3\mathrm{Si}$

V. Yu. Fedotov, E. M. Savitskii

A. Baikov Institute of Metallurgy USSR Academy of Sciences, Moscow
Full-text PDF (304 kB)
Received: 02.06.1981
Document Type: Article
UDC: 537.312.52
Language: Russian
Citation: V. Yu. Fedotov, E. M. Savitskii, “Tunneling in the system $\mathrm{GaAs}$–$\mathrm{V}$ and $\mathrm{GaAs}$–$\mathrm{V}_3\mathrm{Si}$”, Dokl. Akad. Nauk SSSR, 261:2 (1981), 346–347
Citation in format AMSBIB
\Bibitem{FedSav81}
\by V.~Yu.~Fedotov, E.~M.~Savitskii
\paper Tunneling in the system $\mathrm{GaAs}$--$\mathrm{V}$ and $\mathrm{GaAs}$--$\mathrm{V}_3\mathrm{Si}$
\jour Dokl. Akad. Nauk SSSR
\yr 1981
\vol 261
\issue 2
\pages 346--347
\mathnet{http://mi.mathnet.ru/dan44863}
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