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Doklady Akademii Nauk SSSR, 1981, Volume 257, Number 5, Pages 1110–1113 (Mi dan44389)  
PHYSICS

Annealing of implanted layers of silicon by the pulsed $\mathrm{CO}_2$-laser radiation

M. F. Galyautdinov, Yu. K. Danileiko, M. M. Zaripov, A. A. Manenkov, A. V. Sidorin, I. B. Khaibullin, E. I. Shtyrkov

P. N. Lebedev Physical Institute, the USSR Academy of Sciences, Moscow
Full-text PDF (646 kB)
Presented: A. M. Prokhorov
Received: 10.11.1980
Document Type: Article
UDC: 621.315.592
Language: Russian
Citation: M. F. Galyautdinov, Yu. K. Danileiko, M. M. Zaripov, A. A. Manenkov, A. V. Sidorin, I. B. Khaibullin, E. I. Shtyrkov, “Annealing of implanted layers of silicon by the pulsed $\mathrm{CO}_2$-laser radiation”, Dokl. Akad. Nauk SSSR, 257:5 (1981), 1110–1113
Citation in format AMSBIB
\Bibitem{GalDanZar81}
\by M.~F.~Galyautdinov, Yu.~K.~Danileiko, M.~M.~Zaripov, A.~A.~Manenkov, A.~V.~Sidorin, I.~B.~Khaibullin, E.~I.~Shtyrkov
\paper Annealing of implanted layers of silicon by the pulsed $\mathrm{CO}_2$-laser radiation
\jour Dokl. Akad. Nauk SSSR
\yr 1981
\vol 257
\issue 5
\pages 1110--1113
\mathnet{http://mi.mathnet.ru/dan44389}
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