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Doklady Akademii Nauk SSSR, 1971, Volume 197, Number 2, Pages 319–322 (Mi dan36055)  
PHYSICS

The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals

V. M. Gusev, N. P. Busharov, K. D. Demakov, Yu. G. Kozlov

I. V. Kurchatov Institute of Atomic Energy
Full-text PDF (641 kB)
Presented: L. A. Artsimovich
Received: 20.07.1970
Document Type: Article
UDC: 539.2
Language: Russian
Citation: V. M. Gusev, N. P. Busharov, K. D. Demakov, Yu. G. Kozlov, “The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals”, Dokl. Akad. Nauk SSSR, 197:2 (1971), 319–322
Citation in format AMSBIB
\Bibitem{GusBusDem71}
\by V.~M.~Gusev, N.~P.~Busharov, K.~D.~Demakov, Yu.~G.~Kozlov
\paper The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
\jour Dokl. Akad. Nauk SSSR
\yr 1971
\vol 197
\issue 2
\pages 319--322
\mathnet{http://mi.mathnet.ru/dan36055}
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