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Doklady Akademii Nauk SSSR, 1970, Volume 193, Number 6, Pages 1283–1285 (Mi dan35628)  
PHYSICS

Sensibilized photolysis on semiconductors as a principle of long-wave photography

A. D. Sablin-Iavorskii, L. M. Belyaev, V. M. Fridkin

Institute of Cristallography of the USSR Academy of Sciences, Moscow
Full-text PDF (581 kB)
Presented: A. V. Shubnikov
Received: 20.01.1970
Document Type: Article
Language: Russian
Citation: A. D. Sablin-Iavorskii, L. M. Belyaev, V. M. Fridkin, “Sensibilized photolysis on semiconductors as a principle of long-wave photography”, Dokl. Akad. Nauk SSSR, 193:6 (1970), 1283–1285
Citation in format AMSBIB
\Bibitem{SabBelFri70}
\by A.~D.~Sablin-Iavorskii, L.~M.~Belyaev, V.~M.~Fridkin
\paper Sensibilized photolysis on semiconductors as a principle of long-wave photography
\jour Dokl. Akad. Nauk SSSR
\yr 1970
\vol 193
\issue 6
\pages 1283--1285
\mathnet{http://mi.mathnet.ru/dan35628}
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