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Doklady Akademii Nauk SSSR, 1970, Volume 192, Number 2, Pages 324–326 (Mi dan35416)  

CRYSTALLOGRAPHY

Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon

A. I. Gerasimov, E. I. Zorin, P. V. Pavlov, D. I. Tetelbaum

Scientific-Research Physicotechnical Institute at the Gor'kii State University
Presented: N. V. Belov
Received: 01.07.1969
Document Type: Article
UDC: 539.1.043+539.213+539.27
Language: Russian
Citation: A. I. Gerasimov, E. I. Zorin, P. V. Pavlov, D. I. Tetelbaum, “Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon”, Dokl. Akad. Nauk SSSR, 192:2 (1970), 324–326
Citation in format AMSBIB
\Bibitem{GerZorPav70}
\by A.~I.~Gerasimov, E.~I.~Zorin, P.~V.~Pavlov, D.~I.~Tetelbaum
\paper Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon
\jour Dokl. Akad. Nauk SSSR
\yr 1970
\vol 192
\issue 2
\pages 324--326
\mathnet{http://mi.mathnet.ru/dan35416}
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