Doklady Akademii Nauk SSSR
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Dokl. Akad. Nauk:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Doklady Akademii Nauk SSSR, 1969, Volume 187, Number 3, Pages 549–551 (Mi dan34786)  
PHYSICS

High temperature creep of single silicon crystals

M. M. Myshlyaev, V. I. Nikitenko

Institute of Solid State Physics, Academy of Sciences of the USSR, Chernogolovka, Moscow region
Full-text PDF (700 kB)
Presented: S. N. Zhurkov
Received: 23.01.1969
Document Type: Article
UDC: 539.376
Language: Russian
Citation: M. M. Myshlyaev, V. I. Nikitenko, “High temperature creep of single silicon crystals”, Dokl. Akad. Nauk SSSR, 187:3 (1969), 549–551
Citation in format AMSBIB
\Bibitem{MysNik69}
\by M.~M.~Myshlyaev, V.~I.~Nikitenko
\paper High temperature creep of single silicon crystals
\jour Dokl. Akad. Nauk SSSR
\yr 1969
\vol 187
\issue 3
\pages 549--551
\mathnet{http://mi.mathnet.ru/dan34786}
Linking options:
  • https://www.mathnet.ru/eng/dan34786
  • https://www.mathnet.ru/eng/dan/v187/i3/p549
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024