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Doklady Akademii Nauk SSSR, 1968, Volume 180, Number 1, Pages 52–55 (Mi dan33828)  
PHYSICS

Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact

È. I. Adirovich, L. A. Doubrovsky

Physical-Technical Institute, Academy of Sciences of the Uzbek SSR
Full-text PDF (539 kB)
Received: 28.11.1967
Document Type: Article
UDC: 539.294:537.3
Language: Russian
Citation: È. I. Adirovich, L. A. Doubrovsky, “Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact”, Dokl. Akad. Nauk SSSR, 180:1 (1968), 52–55
Citation in format AMSBIB
\Bibitem{AdiDou68}
\by \`E.~I.~Adirovich, L.~A.~Doubrovsky
\paper Heterocontact between semiconductor and dielectric with an electron trap in the layer close to the contact
\jour Dokl. Akad. Nauk SSSR
\yr 1968
\vol 180
\issue 1
\pages 52--55
\mathnet{http://mi.mathnet.ru/dan33828}
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