Doklady Akademii Nauk SSSR
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Dokl. Akad. Nauk:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Doklady Akademii Nauk SSSR, 1965, Volume 164, Number 6, Pages 1260–1262 (Mi dan31726)  
PHYSICS

The $p$ – $n$-transition in silicon investigated with the aid of liquid electrophotographic developers

A. S. Antonov, L. G. Yuskeselieva

Joint Institute for Nuclear Research, Dubna, Moscow region
Full-text PDF (767 kB)
Presented: N. N. Bogolyubov
Received: 02.03.1965
Document Type: Article
UDC: 539.219.3
Language: Russian
Citation: A. S. Antonov, L. G. Yuskeselieva, “The $p$ – $n$-transition in silicon investigated with the aid of liquid electrophotographic developers”, Dokl. Akad. Nauk SSSR, 164:6 (1965), 1260–1262
Citation in format AMSBIB
\Bibitem{AntYus65}
\by A.~S.~Antonov, L.~G.~Yuskeselieva
\paper The $p$ -- $n$-transition in silicon investigated with the aid of liquid electrophotographic developers
\jour Dokl. Akad. Nauk SSSR
\yr 1965
\vol 164
\issue 6
\pages 1260--1262
\mathnet{http://mi.mathnet.ru/dan31726}
Linking options:
  • https://www.mathnet.ru/eng/dan31726
  • https://www.mathnet.ru/eng/dan/v164/i6/p1260
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024