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Doklady Akademii Nauk SSSR, 1965, Volume 163, Number 3, Pages 663–666 (Mi dan31390)  
CHEMISTRY

Tin arsenide – a new intermetallic semiconductor

Ya. A. Ugaiab, Yu. P. Zaval'skiiab, V. A. Ugaiab, S. A. Mostovayaab, L. A. Bityutskayaab

a Voronezh State University
b Voronezh Technological Institute
Full-text PDF (1077 kB)
Presented: I. V. Tananaev
Received: 06.01.1965
Document Type: Article
Language: Russian
Citation: Ya. A. Ugai, Yu. P. Zaval'skii, V. A. Ugai, S. A. Mostovaya, L. A. Bityutskaya, “Tin arsenide – a new intermetallic semiconductor”, Dokl. Akad. Nauk SSSR, 163:3 (1965), 663–666
Citation in format AMSBIB
\Bibitem{UgaZavUga65}
\by Ya.~A.~Ugai, Yu.~P.~Zaval'skii, V.~A.~Ugai, S.~A.~Mostovaya, L.~A.~Bityutskaya
\paper Tin arsenide~-- a new intermetallic semiconductor
\jour Dokl. Akad. Nauk SSSR
\yr 1965
\vol 163
\issue 3
\pages 663--666
\mathnet{http://mi.mathnet.ru/dan31390}
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