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Computational nanotechnology, 2016, Issue 4, Pages 136–137 (Mi cn99)  
PLASMA, HIGH-FREQUENCY, MICROWAVE AND LASER TECHNOLOGY

The ionizing radiation detectors based on neutron-doped silicon

R. A. Muminova, S. A. Radzhapova, B. S. Radzhapova, R. Kh. Rakhimovb

a Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
b Institute of materials science, «Physics-sun». Uzbekistan Academy of sciences
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Abstract: The article considers features of development of detectors of ionizi-roumega radiation with the working area $S\geq30$ mm$^2$ and a thickness of $W>0.2$ mm, based on single crystals of compensated neutron doping of silicon. Peculiarities of electrophysical and spectral characteristics.
Keywords: monocrystalline silicon, neutron-doped silicon, «input» and «output» window of the detector degradation, energy times-the decision.
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Document Type: Article
Language: Russian
Citation: R. A. Muminov, S. A. Radzhapov, B. S. Radzhapov, R. Kh. Rakhimov, “The ionizing radiation detectors based on neutron-doped silicon”, Comp. nanotechnol., 2016, no. 4, 136–137
Citation in format AMSBIB
\Bibitem{MumRadRad16}
\by R.~A.~Muminov, S.~A.~Radzhapov, B.~S.~Radzhapov, R.~Kh.~Rakhimov
\paper The ionizing radiation detectors based on neutron-doped silicon
\jour Comp. nanotechnol.
\yr 2016
\issue 4
\pages 136--137
\mathnet{http://mi.mathnet.ru/cn99}
\elib{https://elibrary.ru/item.asp?id=27486002}
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