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Computational nanotechnology, 2016, Issue 3, Pages 203–207 (Mi cn89)  
This article is cited in 2 scientific papers (total in 2 papers)

SCIENTIFIC SCHOOL OF RAKHIMOV R. H.
NANOSTRUCTURED MATERIALS

The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes

E. Z. Imamova, T. A. Djalalova, R. A. Muminovb, R. Kh. Rakhimovc

a Tashkent University of Information Technology
b Physical-Technical Institute, «Physics-Sun». Uzbekistan Academy of sciences
c Institute of materials science, «Physics-sun». Uzbekistan Academy of sciences
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Abstract: In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties. In this paper we show the important structural differences between the new contact and the traditional semiconductor photodiodes.
Keywords: solar energy, solar cell, nanoinclusions, quantum dots, nanoscale contact structure, nanoscale «p-n junction».
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Document Type: Article
Language: English
Citation: E. Z. Imamov, T. A. Djalalov, R. A. Muminov, R. Kh. Rakhimov, “The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes”, Comp. nanotechnol., 2016, no. 3, 203–207
Citation in format AMSBIB
\Bibitem{ImaDjaMum16}
\by E.~Z.~Imamov, T.~A.~Djalalov, R.~A.~Muminov, R.~Kh.~Rakhimov
\paper The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes
\jour Comp. nanotechnol.
\yr 2016
\issue 3
\pages 203--207
\mathnet{http://mi.mathnet.ru/cn89}
\elib{https://elibrary.ru/item.asp?id=26619322}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Computational nanotechnology
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    Full-text PDF :48
    References:27
     
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