The teoretical model of new contact structure «nanoobject-semiconductor»

In the paper presents a theoretical model of the fundamentally new contact structures, consisting of a semiconductor base with applied on it surface a lot of nanoinclusions.
Properties of a new type of contact (structure and length) are fundamentally different from the Schottky barriers, solid $p-n$-junctions and heterojunctions.
This theoretical model of the new contact structure explains the photoconversion efficiency in a wide range of infrared solar radiation, that observed in the experiment.
It is shown that the effective absorption of infrared radiation is possible by lengthening the space charge region. This effect is achieved by application many nanoscale $p-n$-junctions on the semiconductor substrate base. The new contact structure can be made of cheap materials such as industrial silicon.