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Computational nanotechnology, 2020, Volume 7, Issue 4, Pages 68–71
DOI: https://doi.org/10.33693/2313-223X-2020-7-4-68-71
(Mi cn322)
 

LETTERS TO THE EDITOR

Mathematical modeling of the diffusion process of a semiconductor detector

R. A. Muminova, Y. Q. Toshmurodovb, G. J. Ergasheva, M. O. Yavqochdiyevb

a Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan
b Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
Abstract: The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is $50 \times 50 \times 1.5$ mm and $8$ bands, and compares them.
Keywords: diffusion, drift, surface concentration, diffusion, activation, energy.
Received: 15.11.2020
Document Type: Article
UDC: 621.376.234
Language: Russian
Citation: R. A. Muminov, Y. Q. Toshmurodov, G. J. Ergashev, M. O. Yavqochdiyev, “Mathematical modeling of the diffusion process of a semiconductor detector”, Comp. nanotechnol., 7:4 (2020), 68–71
Citation in format AMSBIB
\Bibitem{MumTosErg20}
\by R.~A.~Muminov, Y.~Q.~Toshmurodov, G.~J.~Ergashev, M.~O.~Yavqochdiyev
\paper Mathematical modeling of the diffusion process of a semiconductor detector
\jour Comp. nanotechnol.
\yr 2020
\vol 7
\issue 4
\pages 68--71
\mathnet{http://mi.mathnet.ru/cn322}
\crossref{https://doi.org/10.33693/2313-223X-2020-7-4-68-71}
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