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LETTERS TO THE EDITOR
Mathematical modeling of the diffusion process of a semiconductor detector
R. A. Muminova, Y. Q. Toshmurodovb, G. J. Ergasheva, M. O. Yavqochdiyevb a Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan
b Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
Abstract:
The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is $50 \times 50 \times 1.5$ mm and $8$ bands, and compares them.
Keywords:
diffusion, drift, surface concentration, diffusion, activation, energy.
Received: 15.11.2020
Citation:
R. A. Muminov, Y. Q. Toshmurodov, G. J. Ergashev, M. O. Yavqochdiyev, “Mathematical modeling of the diffusion process of a semiconductor detector”, Comp. nanotechnol., 7:4 (2020), 68–71
Linking options:
https://www.mathnet.ru/eng/cn322 https://www.mathnet.ru/eng/cn/v7/i4/p68
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