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Computational nanotechnology, 2018, Issue 3, Pages 65–67 (Mi cn202)  


05.14.03 NUCLEAR POWER STATIONS
Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations

S. A. Radzhapova, R. Kh. Rakhimovb, M. Dzhanklicha, M. A. Zufarova, B. S. Radzhapova

a Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
b Institute of materials science «Physics-sun», Uzbekistan Academy of sciences. Tashkent, Uzbekistan
Abstract: In this paper, features of the development of nuclear radiation detectors 100 mm and thicknesses 0.5 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.
Keywords: Semiconductor Al-nGe-pSi-Au detector, monocrystalline silicon p-tip, sensitive region, «dead» layer.
Document Type: Article
Language: Russian
Citation: S. A. Radzhapov, R. Kh. Rakhimov, M. Dzhanklich, M. A. Zufarov, B. S. Radzhapov, “Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations”, Comp. nanotechnol., 2018, no. 3, 65–67
Citation in format AMSBIB
\Bibitem{RadRakDzh18}
\by S.~A.~Radzhapov, R.~Kh.~Rakhimov, M.~Dzhanklich, M.~A.~Zufarov, B.~S.~Radzhapov
\paper Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al-$\alpha$Ge-pSi-Au for measurement of low intensive ionizing radiations
\jour Comp. nanotechnol.
\yr 2018
\issue 3
\pages 65--67
\mathnet{http://mi.mathnet.ru/cn202}
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