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Computational nanotechnology, 2014, Issue 1, Pages 11–16
(Mi cn2)
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This article is cited in 1 scientific paper (total in 1 paper)
NANOELECTRONICS AND NANOMATERIALS
On the way to modeling large nanosystems at the atomic level
V. G. Zavodinskiia, O. A. Gorkushab a Institute for Material Studies, Khabarovsk Scientific Center, Far Eastern Branch of the Russian Academy of Sciences
b Institute of Applied Mathematics, Far-Eastern Branch of the Russian Academy of Sciences
Abstract:
It is shown that the variation principle can be used as a practical way to find the electron density and the total energy in the frame of the density functional theory without solving of the Kohn-Sham equation (so called orbital-free approach). On examples of dimers Na$_2$, Al$_2$, Si$_2$, P$_2$, K$_2$, Ga$_2$, Ge$_2$ and As$_2$ the equilibrium interatomic distances and binding energies were calculated in good comparison with published data. Results for Si-Al, Si-P, and Al-P dimers are close to results of Kohn-Sham calculations
Citation:
V. G. Zavodinskii, O. A. Gorkusha, “On the way to modeling large nanosystems at the atomic level”, Comp. nanotechnol., 2014, no. 1, 11–16
Linking options:
https://www.mathnet.ru/eng/cn2 https://www.mathnet.ru/eng/cn/y2014/i1/p11
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Statistics & downloads: |
Abstract page: | 174 | Full-text PDF : | 77 | References: | 34 |
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