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Computational nanotechnology, 2014, Issue 1, Pages 11–16 (Mi cn2)  

This article is cited in 1 scientific paper (total in 1 paper)

NANOELECTRONICS AND NANOMATERIALS

On the way to modeling large nanosystems at the atomic level

V. G. Zavodinskiia, O. A. Gorkushab

a Institute for Material Studies, Khabarovsk Scientific Center, Far Eastern Branch of the Russian Academy of Sciences
b Institute of Applied Mathematics, Far-Eastern Branch of the Russian Academy of Sciences
Full-text PDF (311 kB) Citations (1)
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Abstract: It is shown that the variation principle can be used as a practical way to find the electron density and the total energy in the frame of the density functional theory without solving of the Kohn-Sham equation (so called orbital-free approach). On examples of dimers Na$_2$, Al$_2$, Si$_2$, P$_2$, K$_2$, Ga$_2$, Ge$_2$ and As$_2$ the equilibrium interatomic distances and binding energies were calculated in good comparison with published data. Results for Si-Al, Si-P, and Al-P dimers are close to results of Kohn-Sham calculations
Document Type: Article
Language: Russian
Citation: V. G. Zavodinskii, O. A. Gorkusha, “On the way to modeling large nanosystems at the atomic level”, Comp. nanotechnol., 2014, no. 1, 11–16
Citation in format AMSBIB
\Bibitem{ZavGor14}
\by V.~G.~Zavodinskii, O.~A.~Gorkusha
\paper On the way to modeling large nanosystems at the atomic level
\jour Comp. nanotechnol.
\yr 2014
\issue 1
\pages 11--16
\mathnet{http://mi.mathnet.ru/cn2}
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  • https://www.mathnet.ru/eng/cn2
  • https://www.mathnet.ru/eng/cn/y2014/i1/p11
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Computational nanotechnology
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