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Computational nanotechnology, 2018, Issue 2, Pages 72–75 (Mi cn189)  
05.14.00. POWER
05.14.01. COMPLEX POWER SYSTEMS

Ivestigating of some characteristics of an APT-structure with isovalent impurities in order to create devices for measuring and non-destructive controlling

A. M. Kasimakhunovaa, R. Naymanbayeva, L. K. Mamadaliyevaa, R. A. Nurdinovaa, Sh. A. Olimovb

a Fergana Polytechnic Institute, Fergana, Uzbekistan
b Northern China University of Energy,The People’s Republic of China, Beijing
Full-text PDF (761 kB)
Abstract: This paper presents semiconductor films doped with isovalent impurities with an anomalously large photoelectric effect. An APT-photodetector of autonomous type with stable parameters and good degradation characteristics is presented and as a result optoelectronic voltage measuring transformers (OVMT) and current (OCMT) have been developed.
Keywords: abnormal photo tension(APT), photodetectors, electrooptical and magneto-optical phenomena, APT-structures, photoelectric state.
Document Type: Article
Language: Russian
Citation: A. M. Kasimakhunova, R. Naymanbayev, L. K. Mamadaliyeva, R. A. Nurdinova, Sh. A. Olimov, “Ivestigating of some characteristics of an APT-structure with isovalent impurities in order to create devices for measuring and non-destructive controlling”, Comp. nanotechnol., 2018, no. 2, 72–75
Citation in format AMSBIB
\Bibitem{KasNayMam18}
\by A.~M.~Kasimakhunova, R.~Naymanbayev, L.~K.~Mamadaliyeva, R.~A.~Nurdinova, Sh.~A.~Olimov
\paper Ivestigating of some characteristics of an APT-structure with isovalent impurities in order to create devices for measuring and non-destructive controlling
\jour Comp. nanotechnol.
\yr 2018
\issue 2
\pages 72--75
\mathnet{http://mi.mathnet.ru/cn189}
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    		Computational nanotechnology
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