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Computational nanotechnology, 2017, Issue 3, Pages 29–32 (Mi cn142)  
PLASMA, HIGH-FREQUENCY, MICROWAVE AND LASER TECHNOLOGY

Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures

R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov

Physical-technical Institute, SPA «Physics-Sun» Academy of Sciences of Uzbekistan
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Abstract: The results of development and optimization of the production technology of large- size semiconductor position-sensitive X-ray detectors, based on Si(Li)-$p-i-n$ structures have been reported. The authors investigated the electro-physical and radiometric characteristics of large-size semiconductor detectors.
Keywords: semiconductor position-sensitive detector, current-voltage, the capacitance-voltage, noise-voltage spectrometric characteristics.
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Document Type: Article
Language: English
Citation: R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures”, Comp. nanotechnol., 2017, no. 3, 29–32
Citation in format AMSBIB
\Bibitem{MumRadTos17}
\by R.~A.~Muminov, S.~A.~Radzhapov, Y.~Q.~Toshmurodov, B.~S.~Radzhapov
\paper Coordinate-sensitive detectors of ionizing radiation on the basis of the Si (Li) $p-i-n$ large-dimension structures
\jour Comp. nanotechnol.
\yr 2017
\issue 3
\pages 29--32
\mathnet{http://mi.mathnet.ru/cn142}
\elib{https://elibrary.ru/item.asp?id=30079066}
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