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Computational nanotechnology, 2017, Issue 3, Pages 27–28
(Mi cn141)
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PLASMA, HIGH-FREQUENCY, MICROWAVE AND LASER TECHNOLOGY
Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of Uzbekistan
Abstract:
This paper, features of the development of nuclear radiation detectors 10 mm and thicknesses 1.4 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.
Keywords:
Semiconductor Al-nGe-pSi-Au detector, monocrystalline silicon, sensitive region, «dead» layer.
Citation:
R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure”, Comp. nanotechnol., 2017, no. 3, 27–28
Linking options:
https://www.mathnet.ru/eng/cn141 https://www.mathnet.ru/eng/cn/y2017/i3/p27
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