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Computational nanotechnology, 2017, Issue 3, Pages 27–28 (Mi cn141)  
PLASMA, HIGH-FREQUENCY, MICROWAVE AND LASER TECHNOLOGY

Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure

R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov

Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of Uzbekistan
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Abstract: This paper, features of the development of nuclear radiation detectors 10 mm and thicknesses 1.4 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.
Keywords: Semiconductor Al-nGe-pSi-Au detector, monocrystalline silicon, sensitive region, «dead» layer.
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Document Type: Article
Language: Russian
Citation: R. A. Muminov, S. A. Radzhapov, Y. Q. Toshmurodov, B. S. Radzhapov, “Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure”, Comp. nanotechnol., 2017, no. 3, 27–28
Citation in format AMSBIB
\Bibitem{MumRadTos17}
\by R.~A.~Muminov, S.~A.~Radzhapov, Y.~Q.~Toshmurodov, B.~S.~Radzhapov
\paper Detectors of X-ray and gamma radiation on the basis of Al-nGe-pSi-Au structure
\jour Comp. nanotechnol.
\yr 2017
\issue 3
\pages 27--28
\mathnet{http://mi.mathnet.ru/cn141}
\elib{https://elibrary.ru/item.asp?id=30079065}
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