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Computational nanotechnology, 2017, Issue 3, Pages 24–26
(Mi cn140)
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NANOSTRUCTURED MATERIALS
Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum
M. A. Abdukadirov, N. A. Axmedova, A. S. Ganiyev Tashkent University of information Technologies
Abstract:
Structures and photoelectric properties of two-transition hetero-photo-diode structures based on AlxGa1-xP ($0 \le x \le 0.6$) and GayIn1-yP ($0.6 \le y \le 0.7$), as well as their main parameters, are presented. It is shown that investigated heterophotodiodesstudied have a divided spectral response in the violet and ultraviolet (UV) bands of the spectrum, promising in the systems of absorption spectrophotometric analysis and control of burning of organic substances by a differential method.
Keywords:
semiconductor, heterostructure, photosensitivity, photoelectric properties, heterophotodiodes.
Citation:
M. A. Abdukadirov, N. A. Axmedova, A. S. Ganiyev, “Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum”, Comp. nanotechnol., 2017, no. 3, 24–26
Linking options:
https://www.mathnet.ru/eng/cn140 https://www.mathnet.ru/eng/cn/y2017/i3/p24
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Statistics & downloads: |
Abstract page: | 115 | Full-text PDF : | 42 | References: | 16 |
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