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Computational nanotechnology, 2017, Issue 3, Pages 24–26 (Mi cn140)  

NANOSTRUCTURED MATERIALS

Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum

M. A. Abdukadirov, N. A. Axmedova, A. S. Ganiyev

Tashkent University of information Technologies
References:
Abstract: Structures and photoelectric properties of two-transition hetero-photo-diode structures based on AlxGa1-xP ($0 \le x \le 0.6$) and GayIn1-yP ($0.6 \le y \le 0.7$), as well as their main parameters, are presented. It is shown that investigated heterophotodiodesstudied have a divided spectral response in the violet and ultraviolet (UV) bands of the spectrum, promising in the systems of absorption spectrophotometric analysis and control of burning of organic substances by a differential method.
Keywords: semiconductor, heterostructure, photosensitivity, photoelectric properties, heterophotodiodes.
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Abdukadirov, N. A. Axmedova, A. S. Ganiyev, “Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum”, Comp. nanotechnol., 2017, no. 3, 24–26
Citation in format AMSBIB
\Bibitem{AbdAxmGan17}
\by M.~A.~Abdukadirov, N.~A.~Axmedova, A.~S.~Ganiyev
\paper Two transitive AlxGa1-xP / GaP / Gayin1-yP photodiodes with a selective sensitivity in a vioelet and the middle of the ultraviolet band of the spectrum
\jour Comp. nanotechnol.
\yr 2017
\issue 3
\pages 24--26
\mathnet{http://mi.mathnet.ru/cn140}
\elib{https://elibrary.ru/item.asp?id=30079064}
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    Computational nanotechnology
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