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Computational nanotechnology, 2017, Issue 1, Pages 50–51
(Mi cn109)
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NANOSTRUCTURED MATERIALS
Properties of $\mathrm{GaAs/AlGaAs}$ heterophototransformators with holographic concentrators
M. A. Abdukadirova, Z. T. Azamatovb, N. A. Axmedovaa, A. S. Ganiyeva, R. A. Muminovc a Tashkent University of information Technologies
b Tashkent State Technical University
c Physical-Technical Institute «Physics-San» Uzbekistan Academy of sciences
Abstract:
Studied photovoltaic processes in $\mathrm{GaAs/AlGaAs}$ heterostructure solar cell with a spectral sensitivity in the range of $450\leq\lambda\leq850$ nm under holographic concentrator illumination. It is shown that with increasing of concentration of the solar flux to $10$krat with a linear increase in short-circuit current and open circuit voltage efficiency reaches its maximum value.
Keywords:
solar sell, semi conduction, gallium arsenide, spektrowave diapazon, short circuit current, open circuit voltage, hologhraphic concentrator.
Citation:
M. A. Abdukadirov, Z. T. Azamatov, N. A. Axmedova, A. S. Ganiyev, R. A. Muminov, “Properties of $\mathrm{GaAs/AlGaAs}$ heterophototransformators with holographic concentrators”, Comp. nanotechnol., 2017, no. 1, 50–51
Linking options:
https://www.mathnet.ru/eng/cn109 https://www.mathnet.ru/eng/cn/y2017/i1/p50
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Statistics & downloads: |
Abstract page: | 111 | Full-text PDF : | 42 | References: | 12 |
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