Matematicheskoe modelirovanie
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Mat. Model.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Matematicheskoe modelirovanie, 2022, Volume 34, Number 2, Pages 58–70
DOI: https://doi.org/10.20948/mm-2022-02-05 (Mi mm4354) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Thermomechanical effects of radiation origin in microelectronics products

Yu. A. Volkova, M. Yu. Vyrostkovb, M. B. Markova, I. A. Tarakanova

a Keldysh Institute for Applied Mathematics of RAS
b National Research University «Moscow Power Engineering Institute»
Full-text PDF (435 kB) Citations (1)
References:
PDF
HTML
DOI: https://doi.org/10.20948/mm-2022-02-05
Abstract: A mathematical model of the thermomechanical effect of penetrating radiation on a microelectronic product is presented. The model is based on the thermoelasticity equations, which are a consequence of the quantum kinetic equations for phonons. Heat transport is described by the law of conservation of energy and the Cattaneo equation, which takes into account the finite rate of heat propagation. Lattice vibrations are considered in the approximation of the linear theory of elasticity. In general, the model determines the distribution of temperature, energy flow, deformation and stress. Difference schemes have been developed for solving the model equations. The effectiveness of the developed model was tested by solving the problem of thermal shock.
Keywords: penetrating radiation, thermomechanical effect, thermoelasticity, phonons, thermal conductivity, difference scheme, thermal shock.
Funding agency Grant number
Russian Foundation for Basic Research 20-01-00419
Received: 16.09.2021
Revised: 16.09.2021
Accepted: 08.11.2021
English version:
Mathematical Models and Computer Simulations, 2022, Volume 14, Issue 5, Pages 727–735
DOI: https://doi.org/10.1134/S2070048222050179
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. A. Volkov, M. Yu. Vyrostkov, M. B. Markov, I. A. Tarakanov, “Thermomechanical effects of radiation origin in microelectronics products”, Mat. Model., 34:2 (2022), 58–70; Math. Models Comput. Simul., 14:5 (2022), 727–735
Citation in format AMSBIB
\Bibitem{VolVyrMar22}
\by Yu.~A.~Volkov, M.~Yu.~Vyrostkov, M.~B.~Markov, I.~A.~Tarakanov
\paper Thermomechanical effects of radiation origin in microelectronics products
\jour Mat. Model.
\yr 2022
\vol 34
\issue 2
\pages 58--70
\mathnet{http://mi.mathnet.ru/mm4354}
\crossref{https://doi.org/10.20948/mm-2022-02-05}
\mathscinet{http://mathscinet.ams.org/mathscinet-getitem?mr=4375130}
\transl
\jour Math. Models Comput. Simul.
\yr 2022
\vol 14
\issue 5
\pages 727--735
\crossref{https://doi.org/10.1134/S2070048222050179}
Linking options:
  • https://www.mathnet.ru/eng/mm4354
  • https://www.mathnet.ru/eng/mm/v34/i2/p58
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Математическое моделирование
    Statistics & downloads:
    Abstract page:217
    Full-text PDF :88
    References:39
    First page:5
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025